Hsu, Kuang-Yuan <br/><br/>
Growth and characteristics of self-assembly defect-free GaN surface islands by molecular beam epitaxy.  [electronic resource] 

 -  Journal of nanoscience and nanotechnology  Apr 2011 
 - 3393-8 p.  digital 
<br/><br/> Publication Type: Journal Article; Research Support, Non-U.S. Gov't 
<br/><br/><label>ISSN: </label>1533-4880 
<br/><br/><label>Standard No.: </label>10.1166/jnn.2011.3752  doi 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Crystallization--methods<br/>Gallium--chemistry<br/>Heavy Ions<br/>Macromolecular Substances--chemistry<br/>Materials Testing<br/>Molecular Conformation--radiation effects<br/>Nanostructures--chemistry<br/>Particle Size<br/>Surface Properties--radiation effects