Kim, C S <br/><br/>
Estimation of relative defect densities in InGaN laser diodes by induced absorption of photoexcited carriers.  [electronic resource] 

 -  Optics express  Dec 2010 
 - 27136-41 p.  digital 
<br/><br/> Publication Type: Evaluation Study; Journal Article; Research Support, Non-U.S. Gov't 
<br/><br/><label>ISSN: </label>1094-4087 
<br/><br/><label>Standard No.: </label>10.1364/OE.18.027136  doi 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Equipment Failure Analysis--methods<br/>Gallium--chemistry<br/>Indium--chemistry<br/>Lasers, Semiconductor<br/>Photometry--methods<br/>Protons