Sheu, Jinn-Kong <br/><br/>
InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO₂ patterned GaN film.  [electronic resource] 

 -  Optics express  Nov 2010 
 - A562-7 p.  digital 
<br/><br/> Publication Type: Journal Article; Research Support, Non-U.S. Gov't 
<br/><br/><label>ISSN: </label>1094-4087 
<br/><br/><label>Standard No.: </label>10.1364/OE.18.00A562  doi