Manna, Sujit <br/><br/>
Rectifying properties of p-GaN nanowires and an n-silicon heterojunction vertical diode.  [electronic resource] 

 -  ACS applied materials & interfaces  Dec 2010 
 - 3539-43 p.  digital 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>1944-8244 
<br/><br/><label>Standard No.: </label>10.1021/am100712h  doi 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Crystallization--methods<br/>Electrodes<br/>Equipment Design<br/>Equipment Failure Analysis<br/>Gallium--chemistry<br/>Materials Testing<br/>Nanostructures--chemistry<br/>Nanotechnology--instrumentation<br/>Particle Size<br/>Semiconductors