Tayag, T J <br/><br/>
Direct measurement of the electrogyratory effect in bismuth silicon oxide.  [electronic resource] 

 -  Applied optics  Feb 1992 
 - 625-9 p.  digital 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>1559-128X 
<br/><br/><label>Standard No.: </label>10.1364/AO.31.000625  doi