Jenkins, P P <br/><br/>
Gallium arsenide transistors: realization through a molecularly designed insulator.  [electronic resource] 

 -  Science (New York, N.Y.)  Mar 1994 
 - 1751-3 p.  digital 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>0036-8075 
<br/><br/><label>Standard No.: </label>10.1126/science.263.5154.1751  doi