Chen, Ching S <br/><br/>
Properties of Cu(thd)2 as a precursor to prepare Cu/SiO2 catalyst using the atomic layer epitaxy technique.  [electronic resource] 

 -  Journal of the American Chemical Society  Dec 2006 
 - 15950-1 p.  digital 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>0002-7863 
<br/><br/><label>Standard No.: </label>10.1021/ja063083d  doi