Latyshev, A V <br/><br/>
Application of ultrahigh vacuum reflection electron microscopy for the study of clean silicon surfaces in sublimation, epitaxy, and phase transitions.  [electronic resource] 

 -  Microscopy research and technique  Feb 1992 
 - 341-51 p.  digital 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>1059-910X 
<br/><br/><label>Standard No.: </label>10.1002/jemt.1070200405  doi 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Crystallization<br/>Germanium--chemistry<br/>Microscopy, Electron--instrumentation<br/>Silicon--chemistry<br/>Surface Properties<br/>Thermodynamics<br/>Vacuum