TY  - GEN
AU  - Johnson,J W
AU  - Ren,F
AU  - Pearton,S J
AU  - Baca,A G
AU  - Han,J
AU  - Dabiran,A M
AU  - Chow,P P
TI  - Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths
SN  - 1533-4880
PY  - 2003///1118
KW  - Aluminum
KW  - chemistry
KW  - Amplifiers, Electronic
KW  - Crystallization
KW  - methods
KW  - Electrochemistry
KW  - instrumentation
KW  - Electrons
KW  - Equipment Design
KW  - Equipment Failure Analysis
KW  - Gallium
KW  - Materials Testing
KW  - Miniaturization
KW  - Nanotechnology
KW  - Transistors, Electronic
N1  - Publication Type: Evaluation Study; Journal Article; Research Support, U.S. Gov't, Non-P.H.S
UR  - https://doi.org/10.1166/jnn.2002.092
ER  -