Johnson, J W <br/><br/>
Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths.  [electronic resource] 

 -  Journal of nanoscience and nanotechnology   
 - 325-32 p.  digital 
<br/><br/> Publication Type: Evaluation Study; Journal Article; Research Support, U.S. Gov't, Non-P.H.S. 
<br/><br/><label>ISSN: </label>1533-4880 
<br/><br/><label>Standard No.: </label>10.1166/jnn.2002.092  doi 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Aluminum--chemistry<br/>Amplifiers, Electronic<br/>Crystallization--methods<br/>Electrochemistry--instrumentation<br/>Electrons<br/>Equipment Design<br/>Equipment Failure Analysis--methods<br/>Gallium--chemistry<br/>Materials Testing--methods<br/>Miniaturization<br/>Nanotechnology--instrumentation<br/>Transistors, Electronic