Experimental evidence for zero-correlation-energy deep defects in intrinsic hydrogenated amorphous silicon.  [electronic resource] 

 -  Physical review letters  Jun 1990 
 - 3062-3065 p.  digital 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>1079-7114 
<br/><br/><label>Standard No.: </label>10.1103/PhysRevLett.64.3062  doi