Band discontinuity at the (311)A GaAs/AlAs interface and possibility of its control by Si insertion layers. [electronic resource]

Publication details: Physical review. B, Condensed matter Dec 1994Description: 17242-17248 p. digitalISSN:
  • 0163-1829
Online resources: In: Physical review. B, Condensed matter vol. 50
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Publication Type: Journal Article

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