Interface formation of GaAs with Si(100), Si(111), and Ge(111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and As. [electronic resource]

Publication details: Physical review. B, Condensed matter Dec 1987Description: 9569-9580 p. digitalISSN:
  • 0163-1829
Online resources: In: Physical review. B, Condensed matter vol. 36
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Publication Type: Journal Article

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