Highly stable, solution-processed quaternary oxide thin film-based resistive switching random access memory devices via global and local stoichiometric manipulation strategy. [electronic resource]

By: Contributor(s): Publication details: Nanotechnology Mar 2020Description: 245202 p. digitalISSN:
  • 1361-6528
Online resources: In: Nanotechnology vol. 31
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Publication Type: Journal Article

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