APA
Li X., Jordan M. B., Ayari T., Sundaram S., El Gmili Y., Alam S., Alam M., Patriarche G., Voss P. L., Paul Salvestrini J. & Ougazzaden A. (20180326). Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE. : Scientific reports.
Chicago
Li Xin, Jordan Matthew B, Ayari Taha, Sundaram Suresh, El Gmili Youssef, Alam Saiful, Alam Muhbub, Patriarche Gilles, Voss Paul L, Paul Salvestrini Jean and Ougazzaden Abdallah. 20180326. Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE. : Scientific reports.
Harvard
Li X., Jordan M. B., Ayari T., Sundaram S., El Gmili Y., Alam S., Alam M., Patriarche G., Voss P. L., Paul Salvestrini J. and Ougazzaden A. (20180326). Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE. : Scientific reports.
MLA
Li Xin, Jordan Matthew B, Ayari Taha, Sundaram Suresh, El Gmili Youssef, Alam Saiful, Alam Muhbub, Patriarche Gilles, Voss Paul L, Paul Salvestrini Jean and Ougazzaden Abdallah. Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE. : Scientific reports. 20180326.