Epitaxy and characterization of GaInP/AlInP light-emitting diodes on As-doped Ge/Si substrates. [electronic resource]

By: Contributor(s): Producer: 20180131Description: 23129-23135 p. digitalISSN:
  • 1094-4087
Online resources: In: Optics express vol. 24
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Publication Type: Journal Article

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