Improvement of Resistive Random Access Memory Device Performance via Embedding of Low-K Dielectric Layer. [electronic resource]

By: Contributor(s): Producer: 20160808Description: 1587-91 p. digitalISSN:
  • 1533-4899
Online resources: In: Journal of nanoscience and nanotechnology vol. 16
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Publication Type: Journal Article; Research Support, Non-U.S. Gov't

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