APA

Summerfield A., Davies A., Cheng T. S., Korolkov V. V., Cho Y. J., Mellor C. J., Foxon C. T., Khlobystov A. N., Watanabe K., Taniguchi T., Eaves L., Novikov S. V. & Beton P. H. (062016). Erratum: Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy. : Scientific reports.

Chicago

Summerfield Alex, Davies Andrew, Cheng Tin S, Korolkov Vladimir V, Cho Yong Jin, Mellor Christopher J, Foxon C Thomas, Khlobystov Andrei N, Watanabe Kenji, Taniguchi Takashi, Eaves Laurence, Novikov Sergei V and Beton Peter H. 062016. Erratum: Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy. : Scientific reports.

Harvard

Summerfield A., Davies A., Cheng T. S., Korolkov V. V., Cho Y. J., Mellor C. J., Foxon C. T., Khlobystov A. N., Watanabe K., Taniguchi T., Eaves L., Novikov S. V. and Beton P. H. (062016). Erratum: Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy. : Scientific reports.

MLA

Summerfield Alex, Davies Andrew, Cheng Tin S, Korolkov Vladimir V, Cho Yong Jin, Mellor Christopher J, Foxon C Thomas, Khlobystov Andrei N, Watanabe Kenji, Taniguchi Takashi, Eaves Laurence, Novikov Sergei V and Beton Peter H. Erratum: Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy. : Scientific reports. 062016.