Multilevel Resistance Switching Memory in La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) Heterostructure by Combined Straintronics-Spintronics. [electronic resource]
Producer: 20160708Description: 5424-31 p. digitalISSN:- 1944-8252
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Publication Type: Journal Article; Research Support, Non-U.S. Gov't
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