Effect of oxygen and ozone on p-type doping of ultra-thin WSe2 and MoSe2 field effect transistors. [electronic resource]

By: Contributor(s): Producer: 20160719Description: 4304-9 p. digitalISSN:
  • 1463-9084
Online resources: In: Physical chemistry chemical physics : PCCP vol. 18
Tags from this library: No tags from this library for this title. Log in to add tags.
Star ratings
    Average rating: 0.0 (0 votes)
No physical items for this record

Publication Type: Journal Article; Research Support, Non-U.S. Gov't

There are no comments on this title.

to post a comment.