APA

Verbitskiy N. I., Fedorov A. V., Profeta G., Stroppa A., Petaccia L., Senkovskiy B., Nefedov A., Wöll C., Usachov D. Y., Vyalikh D. V., Yashina L. V., Eliseev A. A., Pichler T. & Grüneis A. (20160509). Atomically precise semiconductor--graphene and hBN interfaces by Ge intercalation. : Scientific reports.

Chicago

Verbitskiy N I, Fedorov A V, Profeta G, Stroppa A, Petaccia L, Senkovskiy B, Nefedov A, Wöll C, Usachov D Yu, Vyalikh D V, Yashina L V, Eliseev A A, Pichler T and Grüneis A. 20160509. Atomically precise semiconductor--graphene and hBN interfaces by Ge intercalation. : Scientific reports.

Harvard

Verbitskiy N. I., Fedorov A. V., Profeta G., Stroppa A., Petaccia L., Senkovskiy B., Nefedov A., Wöll C., Usachov D. Y., Vyalikh D. V., Yashina L. V., Eliseev A. A., Pichler T. and Grüneis A. (20160509). Atomically precise semiconductor--graphene and hBN interfaces by Ge intercalation. : Scientific reports.

MLA

Verbitskiy N I, Fedorov A V, Profeta G, Stroppa A, Petaccia L, Senkovskiy B, Nefedov A, Wöll C, Usachov D Yu, Vyalikh D V, Yashina L V, Eliseev A A, Pichler T and Grüneis A. Atomically precise semiconductor--graphene and hBN interfaces by Ge intercalation. : Scientific reports. 20160509.