The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons? [electronic resource]

By: Contributor(s): Producer: 20160502Description: e0128438 p. digitalISSN:
  • 1932-6203
Subject(s): Online resources: In: PloS one vol. 10
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Publication Type: Journal Article; Research Support, Non-U.S. Gov't

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