High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy. [electronic resource]

By: Contributor(s): Producer: 20150710Description: 8383-8 p. digitalISSN:
  • 1094-4087
Online resources: In: Optics express vol. 23
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Publication Type: Journal Article

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