APA

Chen H., Dong S., Bai M., Cheng N., Wang H., Li M., Du H., Hu S., Yang Y., Yang T., Zhang F., Gu L., Meng S., Hou S. & Guo X. (20150515). Solution-processable, low-voltage, and high-performance monolayer field-effect transistors with aqueous stability and high sensitivity. : Advanced materials (Deerfield Beach, Fla.).

Chicago

Chen Hongliang, Dong Shaohua, Bai Meilin, Cheng Nongyi, Wang Hao, Li Mingliang, Du Huiwen, Hu Shuxin, Yang Yanlian, Yang Tieying, Zhang Fan, Gu Lin, Meng Sheng, Hou Shimin and Guo Xuefeng. 20150515. Solution-processable, low-voltage, and high-performance monolayer field-effect transistors with aqueous stability and high sensitivity. : Advanced materials (Deerfield Beach, Fla.).

Harvard

Chen H., Dong S., Bai M., Cheng N., Wang H., Li M., Du H., Hu S., Yang Y., Yang T., Zhang F., Gu L., Meng S., Hou S. and Guo X. (20150515). Solution-processable, low-voltage, and high-performance monolayer field-effect transistors with aqueous stability and high sensitivity. : Advanced materials (Deerfield Beach, Fla.).

MLA

Chen Hongliang, Dong Shaohua, Bai Meilin, Cheng Nongyi, Wang Hao, Li Mingliang, Du Huiwen, Hu Shuxin, Yang Yanlian, Yang Tieying, Zhang Fan, Gu Lin, Meng Sheng, Hou Shimin and Guo Xuefeng. Solution-processable, low-voltage, and high-performance monolayer field-effect transistors with aqueous stability and high sensitivity. : Advanced materials (Deerfield Beach, Fla.). 20150515.