Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s. [electronic resource]

By: Contributor(s): Producer: 20131017Description: 5818-23 p. digitalISSN:
  • 1936-086X
Subject(s): Online resources: In: ACS nano vol. 7
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Publication Type: Journal Article

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