Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces. [electronic resource]

By: Contributor(s): Producer: 20121213Description: 367 p. digitalISSN:
  • 1556-276X
Online resources: In: Nanoscale research letters vol. 7
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Publication Type: Journal Article

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