Bias-stress effect in 1,2-ethanedithiol-treated PbS quantum dot field-effect transistors. [electronic resource]

By: Contributor(s): Producer: 20120827Description: 3121-7 p. digitalISSN:
  • 1936-086X
Online resources: In: ACS nano vol. 6
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Publication Type: Journal Article; Research Support, Non-U.S. Gov't; Research Support, U.S. Gov't, Non-P.H.S.

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