Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells. [electronic resource]

By: Contributor(s): Producer: 20120927Description: 3932-40 p. digitalISSN:
  • 1094-4087
Online resources: In: Optics express vol. 20
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Publication Type: Journal Article; Research Support, Non-U.S. Gov't

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