Reduce cell to cell charge interference by virtual ground inclusion in 3-dimensional vertical gate NAND flash memory. [electronic resource]

By: Contributor(s): Producer: 20120105Description: 5865-9 p. digitalISSN:
  • 1533-4880
Online resources: In: Journal of nanoscience and nanotechnology vol. 11
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Publication Type: Journal Article; Research Support, Non-U.S. Gov't

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