Evaluation of Schottky barrier diodes fabricated directly on processed 4H-SiC(0001) surfaces. [electronic resource]

By: Contributor(s): Producer: 20110823Description: 2809-13 p. digitalISSN:
  • 1533-4880
Subject(s): Online resources: In: Journal of nanoscience and nanotechnology vol. 11
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Publication Type: Evaluation Study; Journal Article; Research Support, Non-U.S. Gov't

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