Schottky barrier SOI-MOSFETs with high-k La(2)O(3)/ZrO(2) gate dielectrics. [electronic resource]

By: Contributor(s): Publication details: Microelectronic engineering Mar 2011Description: 262-267 p. digitalISSN:
  • 0167-9317
Online resources: In: Microelectronic engineering vol. 88
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Publication Type: Journal Article

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