APA
Morales-Cortés H., Mejía-García C., Méndez-García V. H., Vázquez-Cortés D., Rojas-Ramírez J. S., Contreras-Guerrero R., Ramírez-López M., Martínez-Velis I. & López-López M. (20100609). Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy. : Nanotechnology.
Chicago
Morales-Cortés H, Mejía-García C, Méndez-García V H, Vázquez-Cortés D, Rojas-Ramírez J S, Contreras-Guerrero R, Ramírez-López M, Martínez-Velis I and López-López M. 20100609. Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy. : Nanotechnology.
Harvard
Morales-Cortés H., Mejía-García C., Méndez-García V. H., Vázquez-Cortés D., Rojas-Ramírez J. S., Contreras-Guerrero R., Ramírez-López M., Martínez-Velis I. and López-López M. (20100609). Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy. : Nanotechnology.
MLA
Morales-Cortés H, Mejía-García C, Méndez-García V H, Vázquez-Cortés D, Rojas-Ramírez J S, Contreras-Guerrero R, Ramírez-López M, Martínez-Velis I and López-López M. Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy. : Nanotechnology. 20100609.