Local inhomogeneity in gate hysteresis of carbon nanotube field-effect transistors investigated by scanning gate microscopy. [electronic resource]

By: Contributor(s): Producer: 20081204Description: 1045-9 p. digitalISSN:
  • 0304-3991
Online resources: In: Ultramicroscopy vol. 108
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Publication Type: Journal Article; Research Support, Non-U.S. Gov't

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