Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays. (Record no. 30789333)

MARC details
000 -LEADER
fixed length control field 00860 a2200241 4500
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20250518093245.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field ####s 0 0 eng d
022 ## - INTERNATIONAL STANDARD SERIAL NUMBER
International Standard Serial Number 2045-2322
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1038/s41598-020-62539-1
Source of number or code doi
040 ## - CATALOGING SOURCE
Original cataloging agency NLM
Language of cataloging eng
Transcribing agency NLM
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Coulon, Pierre-Marie
245 00 - TITLE STATEMENT
Title Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays.
Medium [electronic resource]
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Name of publisher, distributor, etc. Scientific reports
Date of publication, distribution, etc. Mar 2020
300 ## - PHYSICAL DESCRIPTION
Extent 5642 p.
Other physical details digital
500 ## - GENERAL NOTE
General note Publication Type: Journal Article
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Feng, Peng
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Damilano, Benjamin
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Vézian, Stéphane
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Wang, Tao
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Shields, Philip A
773 0# - HOST ITEM ENTRY
Title Scientific reports
Related parts vol. 10
-- no. 1
-- p. 5642
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="https://doi.org/10.1038/s41598-020-62539-1">https://doi.org/10.1038/s41598-020-62539-1</a>
Public note Available from publisher's website

No items available.