Effects of Recess Depth Under the Gate Area on the (Record no. 30548082)

MARC details
000 -LEADER
fixed length control field 00817 a2200229 4500
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20250518082031.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field ####s 0 0 eng d
022 ## - INTERNATIONAL STANDARD SERIAL NUMBER
International Standard Serial Number 1533-4899
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1166/jnn.2020.17783
Source of number or code doi
040 ## - CATALOGING SOURCE
Original cataloging agency NLM
Language of cataloging eng
Transcribing agency NLM
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Kim, Zin-Sig
245 00 - TITLE STATEMENT
Title Effects of Recess Depth Under the Gate Area on the
Medium [electronic resource]
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Name of publisher, distributor, etc. Journal of nanoscience and nanotechnology
Date of publication, distribution, etc. Jul 2020
300 ## - PHYSICAL DESCRIPTION
Extent 4170-4175 p.
Other physical details digital
500 ## - GENERAL NOTE
General note Publication Type: Journal Article
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Lee, Hyung Seok
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Bae, Sung-Bum
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Nam, Eun Soo
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Lim, Jong-Won
773 0# - HOST ITEM ENTRY
Title Journal of nanoscience and nanotechnology
Related parts vol. 20
-- no. 7
-- p. 4170-4175
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="https://doi.org/10.1166/jnn.2020.17783">https://doi.org/10.1166/jnn.2020.17783</a>
Public note Available from publisher's website

No items available.