Correction: Park, J.; et al. Fine-Grained Power Gating Using an MRAM-CMOS Non-Volatile Flip-Flop. Micromachines 2019, 10, 411. (Record no. 30444510)

MARC details
000 -LEADER
fixed length control field 00689 a2200181 4500
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20250518074918.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field ####s 0 0 eng d
022 ## - INTERNATIONAL STANDARD SERIAL NUMBER
International Standard Serial Number 2072-666X
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.3390/mi11010011
Source of number or code doi
040 ## - CATALOGING SOURCE
Original cataloging agency NLM
Language of cataloging eng
Transcribing agency NLM
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Park, Jaeyoung
245 00 - TITLE STATEMENT
Title Correction: Park, J.; et al. Fine-Grained Power Gating Using an MRAM-CMOS Non-Volatile Flip-Flop. Micromachines 2019, 10, 411.
Medium [electronic resource]
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Name of publisher, distributor, etc. Micromachines
Date of publication, distribution, etc. Dec 2019
500 ## - GENERAL NOTE
General note Publication Type: Published Erratum
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Yim, Young Uk
773 0# - HOST ITEM ENTRY
Title Micromachines
Related parts vol. 11
-- no. 1
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="https://doi.org/10.3390/mi11010011">https://doi.org/10.3390/mi11010011</a>
Public note Available from publisher's website

No items available.