Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVD. (Record no. 30337363)

MARC details
000 -LEADER
fixed length control field 00799 a2200217 4500
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20250518071651.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field ####s 0 0 eng d
022 ## - INTERNATIONAL STANDARD SERIAL NUMBER
International Standard Serial Number 1996-1944
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.3390/ma12223795
Source of number or code doi
040 ## - CATALOGING SOURCE
Original cataloging agency NLM
Language of cataloging eng
Transcribing agency NLM
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Chrostowski, Marta
245 00 - TITLE STATEMENT
Title Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVD.
Medium [electronic resource]
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Name of publisher, distributor, etc. Materials (Basel, Switzerland)
Date of publication, distribution, etc. Nov 2019
500 ## - GENERAL NOTE
General note Publication Type: Journal Article
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Alvarez, José
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Le Donne, Alessia
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Binetti, Simona
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Roca I Cabarrocas, Pere
773 0# - HOST ITEM ENTRY
Title Materials (Basel, Switzerland)
Related parts vol. 12
-- no. 22
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="https://doi.org/10.3390/ma12223795">https://doi.org/10.3390/ma12223795</a>
Public note Available from publisher's website

No items available.