Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond. (Record no. 29629656)

MARC details
000 -LEADER
fixed length control field 00878 a2200229 4500
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20250518035000.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field ####s 0 0 eng d
022 ## - INTERNATIONAL STANDARD SERIAL NUMBER
International Standard Serial Number 1533-4880
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1166/jnn.2019.16987
Source of number or code doi
040 ## - CATALOGING SOURCE
Original cataloging agency NLM
Language of cataloging eng
Transcribing agency NLM
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Kim, Zin-Sig
245 00 - TITLE STATEMENT
Title Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond.
Medium [electronic resource]
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Name of publisher, distributor, etc. Journal of nanoscience and nanotechnology
Date of publication, distribution, etc. Oct 2019
300 ## - PHYSICAL DESCRIPTION
Extent 6119-6122 p.
Other physical details digital
500 ## - GENERAL NOTE
General note Publication Type: Journal Article
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Lee, Hyung-Seok
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Bae, Sung-Bum
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Nam, Eunsoo
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Lim, Jong-Won
773 0# - HOST ITEM ENTRY
Title Journal of nanoscience and nanotechnology
Related parts vol. 19
-- no. 10
-- p. 6119-6122
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="https://doi.org/10.1166/jnn.2019.16987">https://doi.org/10.1166/jnn.2019.16987</a>
Public note Available from publisher's website

No items available.