Study of Well Width in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes. (Record no. 25260480)

MARC details
000 -LEADER
fixed length control field 00869 a2200229 4500
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20250517052712.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 201510s 0 0 eng d
022 ## - INTERNATIONAL STANDARD SERIAL NUMBER
International Standard Serial Number 1533-4899
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1166/jnn.2015.9704
Source of number or code doi
040 ## - CATALOGING SOURCE
Original cataloging agency NLM
Language of cataloging eng
Transcribing agency NLM
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Peng, Dongsheng
264 #0 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Date of production, publication, distribution, manufacture, or copyright notice 20151001
245 00 - TITLE STATEMENT
Title Study of Well Width in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes.
Medium [electronic resource]
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Name of publisher, distributor, etc. Journal of nanoscience and nanotechnology
Date of publication, distribution, etc. Jun 2015
300 ## - PHYSICAL DESCRIPTION
Extent 4604-7 p.
Other physical details digital
500 ## - GENERAL NOTE
General note Publication Type: Journal Article; Research Support, Non-U.S. Gov't
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Tan, Congcong
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Chen, Zhigang
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Feng, Zhechuan
773 0# - HOST ITEM ENTRY
Title Journal of nanoscience and nanotechnology
Related parts vol. 15
-- no. 6
-- p. 4604-7
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="https://doi.org/10.1166/jnn.2015.9704">https://doi.org/10.1166/jnn.2015.9704</a>
Public note Available from publisher's website

No items available.