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Facile 3D integration of Si nanowires on Bosch-etched sidewalls for stacked channel transistors.

Hu, Ruijin

Facile 3D integration of Si nanowires on Bosch-etched sidewalls for stacked channel transistors. [electronic resource] - Nanoscale Jan 2020 - 2787-2792 p. digital

Publication Type: Journal Article

ISSN: 2040-3372

Standard No.: 10.1039/c9nr09000b doi

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