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Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid.

Oh, Se-I

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid. [electronic resource] - Nanoscale Oct 2017 - 15314-15322 p. digital

Publication Type: Journal Article

ISSN: 2040-3372

Standard No.: 10.1039/c7nr01840a doi

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