Flexible resistive random access memory devices by using NiO

Lee, Keundong

Flexible resistive random access memory devices by using NiO [electronic resource] - Nanotechnology May 2017 - 205202 p. digital

Publication Type: Journal Article

ISSN: 1361-6528

Standard No.: 10.1088/1361-6528/aa6763 doi

Flexible resistive random access memory devices by using NiO

APA

Lee K., Park J., Tchoe Y., Yoon J., Chung K., Yoon H., Lee S., Yoon C., Ho Park B. & Yi G. (20180723). Flexible resistive random access memory devices by using NiO. : Nanotechnology.

Chicago

Lee Keundong, Park Jong-Woo, Tchoe Youngbin, Yoon Jiyoung, Chung Kunook, Yoon Hosang, Lee Sangik, Yoon Chansoo, Ho Park Bae and Yi Gyu-Chul. 20180723. Flexible resistive random access memory devices by using NiO. : Nanotechnology.

Harvard

Lee K., Park J., Tchoe Y., Yoon J., Chung K., Yoon H., Lee S., Yoon C., Ho Park B. and Yi G. (20180723). Flexible resistive random access memory devices by using NiO. : Nanotechnology.

MLA

Lee Keundong, Park Jong-Woo, Tchoe Youngbin, Yoon Jiyoung, Chung Kunook, Yoon Hosang, Lee Sangik, Yoon Chansoo, Ho Park Bae and Yi Gyu-Chul. Flexible resistive random access memory devices by using NiO. : Nanotechnology. 20180723.

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