APA

Soltamov V. A., Yavkin B. V., Tolmachev D. O., Babunts R. A., Badalyan A. G., Davydov V. Y., Mokhov E. N., Proskuryakov I. I., Orlinskii S. B. & Baranov P. G. (20160425). Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure. : Physical review letters.

Chicago

Soltamov V A, Yavkin B V, Tolmachev D O, Babunts R A, Badalyan A G, Davydov V Yu, Mokhov E N, Proskuryakov I I, Orlinskii S B and Baranov P G. 20160425. Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure. : Physical review letters.

Harvard

Soltamov V. A., Yavkin B. V., Tolmachev D. O., Babunts R. A., Badalyan A. G., Davydov V. Y., Mokhov E. N., Proskuryakov I. I., Orlinskii S. B. and Baranov P. G. (20160425). Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure. : Physical review letters.

MLA

Soltamov V A, Yavkin B V, Tolmachev D O, Babunts R A, Badalyan A G, Davydov V Yu, Mokhov E N, Proskuryakov I I, Orlinskii S B and Baranov P G. Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure. : Physical review letters. 20160425.