Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon.
Edwards, Elizabeth H
Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon. [electronic resource] - Optics express Jan 2013 - 867-76 p. digital
Publication Type: Journal Article; Research Support, Non-U.S. Gov't; Research Support, U.S. Gov't, Non-P.H.S.
1094-4087
10.1364/OE.21.000867 doi
Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon. [electronic resource] - Optics express Jan 2013 - 867-76 p. digital
Publication Type: Journal Article; Research Support, Non-U.S. Gov't; Research Support, U.S. Gov't, Non-P.H.S.
1094-4087
10.1364/OE.21.000867 doi