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Origin of doping in quasi-free-standing graphene on silicon carbide.

Ristein, J

Origin of doping in quasi-free-standing graphene on silicon carbide. [electronic resource] - Physical review letters Jun 2012 - 246104 p. digital

Publication Type: Journal Article

ISSN: 1079-7114

Standard No.: 10.1103/PhysRevLett.108.246104 doi

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