Effective mobility enhancement by using nanometer dot doping in amorphous IGZO thin-film transistors.
Zan, Hsiao-Wen
Effective mobility enhancement by using nanometer dot doping in amorphous IGZO thin-film transistors. [electronic resource] - Advanced materials (Deerfield Beach, Fla.) Oct 2011 - 4237-42 p. digital
Publication Type: Journal Article; Research Support, Non-U.S. Gov't
1521-4095
10.1002/adma.201102530 doi
Gallium--chemistry
Indium--chemistry
Nanostructures--chemistry
Oxides--chemistry
Particle Size
Polystyrenes--chemistry
Radio Frequency Identification Device--methods
Transistors, Electronic
Zinc Compounds--chemistry
Effective mobility enhancement by using nanometer dot doping in amorphous IGZO thin-film transistors. [electronic resource] - Advanced materials (Deerfield Beach, Fla.) Oct 2011 - 4237-42 p. digital
Publication Type: Journal Article; Research Support, Non-U.S. Gov't
1521-4095
10.1002/adma.201102530 doi
Gallium--chemistry
Indium--chemistry
Nanostructures--chemistry
Oxides--chemistry
Particle Size
Polystyrenes--chemistry
Radio Frequency Identification Device--methods
Transistors, Electronic
Zinc Compounds--chemistry