Rectifying properties of p-GaN nanowires and an n-silicon heterojunction vertical diode.

Manna, Sujit

Rectifying properties of p-GaN nanowires and an n-silicon heterojunction vertical diode. [electronic resource] - ACS applied materials & interfaces Dec 2010 - 3539-43 p. digital

Publication Type: Journal Article

1944-8244

10.1021/am100712h doi


Crystallization--methods
Electrodes
Equipment Design
Equipment Failure Analysis
Gallium--chemistry
Materials Testing
Nanostructures--chemistry
Nanotechnology--instrumentation
Particle Size
Semiconductors