Normal view MARC view ISBD view

Direct measurement of the electrogyratory effect in bismuth silicon oxide.

Tayag, T J

Direct measurement of the electrogyratory effect in bismuth silicon oxide. [electronic resource] - Applied optics Feb 1992 - 625-9 p. digital

Publication Type: Journal Article

ISSN: 1559-128X

Standard No.: 10.1364/AO.31.000625 doi

Print
Cite
Add to your cart (remove)
Save record
BIBTEX Dublin Core MARCXML MARC (non-Unicode/MARC-8) MARC (Unicode/UTF-8) MARC (Unicode/UTF-8, Standard) MODS (XML) RIS ISBD
More searches

Search for this title in:
Other Libraries (WorldCat) Other Databases (Google Scholar) Online Stores (Bookfinder.com) Open Library (openlibrary.org)