Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths.

Johnson, J W

Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths. [electronic resource] - Journal of nanoscience and nanotechnology - 325-32 p. digital

Publication Type: Evaluation Study; Journal Article; Research Support, U.S. Gov't, Non-P.H.S.

1533-4880

10.1166/jnn.2002.092 doi


Aluminum--chemistry
Amplifiers, Electronic
Crystallization--methods
Electrochemistry--instrumentation
Electrons
Equipment Design
Equipment Failure Analysis--methods
Gallium--chemistry
Materials Testing--methods
Miniaturization
Nanotechnology--instrumentation
Transistors, Electronic