Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition.

Name: Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition.
Author: Na, So-Yeong

Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition. — المؤلف: Na, So-Yeong — RSC advances Oct 2018

المؤلف: Na, So-Yeong
النشر: RSC advances Oct 2018
الوصف: 34215-34223 p.